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TISP5xxxH3BJ Overvoltage Protection Series
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
'5070H3BJ
'5080H3BJ
'5095H3BJ
Symbol
Value
-58
-65
-75
Unit
Repetitive peak off-state voltage (see Note 1)
'5110H3BJ
V DRM
-80
V
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10 μ s (GR-1089-CORE, 2/10 μ s voltage wave shape)
8/20 μ s (IEC 61000-4-5, 1.2/50 μ s voltage, 8/20 μ s current combination wave generator)
10/160 μ s (TIA-968-A, 10/160 μ s voltage wave shape)
5/200 μ s (VDE 0433, 10/700 μ s voltage waveshape)
'5115H3BJ
'5150H3BJ
'5190H3BJ
-90
-120
-160
± 500
± 300
± 250
± 220
0.2/310 μ s (I3124, 0.5/700 μ s waveshape)
5/310 μ s (ITU-T K.44, 10/700 μ s voltage waveshape used in K.20/21/45)
5/310 μ s (FTZ R12, 10/700 μ s voltage waveshape)
10/560 μ s (TIA-968-A, 10/560 μ s voltage wave shape)
10/1000 μ s (GR-1089-CORE, 10/1000 μ s voltage wave shape)
I PPSM
± 200
± 200
± 200
± 160
± 100
A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms, 50 Hz (full sine wave)
55
16.7 ms, 60 Hz (full sine wave)
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, GR-1089-CORE 2/10 μ s wave shape
Junction temperature
Storage temperature range
I TSM
di T /dt
T J
T stg
60
2.1
± 400
-40 to +150
-65 to +150
A
A/ μ s
° C
° C
NOTES: 1.
2.
3.
4.
5.
See Figure 9 for voltage values at lower temperatures.
Initially the device must be in thermal equilibrium with T J = 25 ° C.
The surge may be repeated after the device returns to its initial conditions.
See F igure 10 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/ ° C for ambient temperatures above 25 ° C. See Figure 8 for current ratings at other
durations.
Electrical Characteristics, T A = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max
Unit
I DRM
Repetitive peak off-state current
V D = V DRM
T A = 25 ° C
T A = 85 ° C
-5
-10
μ A
'5070H3BJ
'5080H3BJ
'5095H3BJ
-70
-80
-95
V (BO)
Breakover voltage
dv/dt = -250 V/ms, R SOURCE = 300 ?
'5110H3BJ
-110
V
'5115H3BJ
'5150H3BJ
'5190H3BJ
'5070H3BJ
-115
-150
-190
-80
V (BO)
Impulse breakover voltage
dv/dt ≥ -1000 V/ μ s, Linear voltage ramp,
Maximum ramp value = -500 V
di/dt = -20 A/ μ s, Linear current ramp,
Maximum ramp value = -10 A
'5080H3BJ
'5095H3BJ
'5110H3BJ
'5115H3BJ
'5150H3BJ
-90
-105
-120
-125
-160
V
'5190H3BJ
-200
JANUARY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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